In this work, we report on electrical characteristics of tantalum oxide films fabricated by anodic oxidation of tantalum nitride and tantalum silicide with thicknesses ranging from 100 to 4500 Angs
Heterojunctions of n-type InAs(0.95)Sb(0.05) grown by OMCVD on n-type GaSb substrates were studied by C-V and I-V measurements.
We show that MBE-grown GaAs on Si exhibits only a modest increase in the concentrations of the well-known electron traps typical of MBE-GaAs with no evidence for any new deep levels in the upper h
The bulk resistivity of Fe-doped MOCVD grown epitaxial InP was determined from current-voltage and capacitance measurements made on Schottky-diode-like devices.
AT&T has developed a family of multilayer hybrid integrated circuits called POLYHIC using film technology on an alumina substrate with triazine-based photodefinable polymer dielectric layers.
Current-voltage measurements on undoped InAlAs layers grown by MBE are reported. The resistivities were found to be 1.
In homogeneous solutions, redox enzymes accept electons from, and transfer electrons to, small redox ions or molecules, but do not exchange electrons with simple metal electrodes.
A scanning Auger microprobe (SAM) has been used to measure the potential profile across semi-insulating polycrystalline silicon (SIPOS) film structures, and the electron beam parameters required to
Langmuir-Blodgett films consisting of 0-62 mol % purified alpha- quinquethiophene (QT) in cadmium stearate-stearic acid (ST) were deposited on glass substrates and characterized by a variety of met
Nickel has not been considered as a contact material because it can be easily oxidized and the nickel oxide layer is insulating.
