of high-frequency devices. Much that might otherwise be said about ultrahigh frequencies cannot be said because of secrecy requirements.
O U L S E code transmission systems 1 in which successive signal amplitude samples are transmitted by pulse code groups require special modulators.
Self-aligned HIGFET devices with gate lengths as short as 0. 125microns (nominal) have been fabricated on MBE grown InAlAs/InGaAs/InP heterostructures using electron beam lithography.
TECHNICAL VOLUME x L v Copyright © 1966, MAY-JUNE 1966 American JOURNAL NUMBER Telegraph Company 5 Telephone and Electron Beam Heating of a Thin Film on a Highly Conducting Substrate By J. A.
Formation of charge-density wave (CDW) superlattice in the blue molybdenum oxide bronze, K(0.30)MoO3 is found to be extremely sensitive to electron beam irradiation.
An electron beam excited one-dimensional array of elongated rod-like elements is proposed.
A new method has been developed for the growth of graded band- gap Al sub x Ga sub (1-x) As alloys by molecular beam epitaxy which is based upon electron beam evaporation of the Group III elements.
A new method has been developed for the growth of graded band- gap Al sub x Ga sub (1-x) As alloys by molecular beam epitaxy which is based upon electron beam evaporation of the Group III elements.
We report both linear and non-linear magnetoconductance measurements on two different density samples of similar stoichiometry Hg sub (1-x) Cd sub x Te for 0.01 T 2.5K and 0 H 80 KOe.
Metals expanded by heating toward the liquid-gas critical point yield a remarkable low density metallic state before passing through a metal-nonmetal transition.
