The electron glass state can form at low temperature in a semiconductor when Coulomb repulsions stabilize disordered electronic configurations with the electrons as distant as possible.
A high current, high voltage and micro discharge free electron gun has been developed. This is a tetrode type electron gun, which has a rating of 120 keV, 1.6 mA.
Absolute cross sections and mass-spectral cracking patterns are reported for ionization of the free radicals CD3 and CD2.
Absolute electron impact cross sections for single and double ionization of Ga and In have been measured from threshold to 200 eV, with an accuracy of +-15%.
Absolute cross sections are measured for electron impact ionization and dissociative ionization of SiF sub 2 from threshold to 200 eV.
Absolute electron impact cross sections for single, double, and triple ionization of gallium and indium have been measured from 0 to 200 eV.
Absolute cross sections for electron-impact ionization of the SiF sub 3 free radical from threshold to 200 eV are presented for formation of the parent SiF sub 3 sup + ion and the fragment SiF sub
We show an electron interferometer between a quantum point contact (QPC) and a scanning gate microscope (SGM) tip in a two-dimensional electron gas.
In this paper, we report the effects of high-energy electron irradiation on the DC characteristics of polyimide passivated InP/InGaAs single heterojunction bipolar transistors.
852-nm emitting Al-free laser diodes and layers constituting the device are irradiated with I-MeV electrons at fluences ranging from 10(14) up to 10(16) e (-)/cm(2).
