Publications

An exact solution is obtained for the quantum-mechanical reflection and transmission coefficients for the electronic motion across the boundary of two different one-dimensional crystals, each desc

Ballistic transmission of electrons is possible in principle across the atomically abrupt epitaxial interfaces that can be formed between silicon and several metallic silicides.

We apply a recently developed formalism for calculating electron transmission across interfaces to silicon stacking faults.

D I R E C T experimental evidence for the wave nature of the electron first demonstrated by Davisson and Germer was based on a property unique to wave phenomena; namely, interference or diffraction

Information on the self-energy of quantized current carrying electron states in intrinsic GaAs has been obtained.

There is interest in using III-V hot electron transistor (HET) devices for potential high speed applications.

We study the nonlinear effects of the electron conductivity in semiconductors when a strong high frequency (HF) electric field is applied together with a direct (DC) electric field.

Abrupt, epitaxial silicide/silicon heterostructures may be grown so that, for the first time, the physics of electron transport across near perfect, single crystal, metal/semiconductor interfaces m

Three codes of electron tubes have been designed and developed specifically for use in the SD submarine cable system: the 455A-F, 456A, and 458A.

Electron tubes suitable for use in long submarine telephone cables must meet performance requirements that are quite different from those imposed by other communication systems.