We apply a recently developed formalism for calculating electron transmission across interfaces to silicon stacking faults.
D I R E C T experimental evidence for the wave nature of the electron first demonstrated by Davisson and Germer was based on a property unique to wave phenomena; namely, interference or diffraction
Information on the self-energy of quantized current carrying electron states in intrinsic GaAs has been obtained.
There is interest in using III-V hot electron transistor (HET) devices for potential high speed applications.
We study the nonlinear effects of the electron conductivity in semiconductors when a strong high frequency (HF) electric field is applied together with a direct (DC) electric field.
Abrupt, epitaxial silicide/silicon heterostructures may be grown so that, for the first time, the physics of electron transport across near perfect, single crystal, metal/semiconductor interfaces m
Three codes of electron tubes have been designed and developed specifically for use in the SD submarine cable system: the 455A-F, 456A, and 458A.
Electron tubes suitable for use in long submarine telephone cables must meet performance requirements that are quite different from those imposed by other communication systems.
We have prepared high quality tunnel junctions on thin films of Nb(3)Sn, Nb(3)Ge, Nb(3)Al and TiN with artificial tunnel barriers of Al-oxide and AlZr-oxide.
Current-voltage tunneling characteristics in the high critical temperature superconducting material Y sub 1 Ba sub 2 Cu sub 3 O sub (9-delta) have been measured using the break junction technique.
