In this paper, we report the effects of high-energy electron irradiation on the DC characteristics of polyimide passivated InP/InGaAs single heterojunction bipolar transistors.
852-nm emitting Al-free laser diodes and layers constituting the device are irradiated with I-MeV electrons at fluences ranging from 10(14) up to 10(16) e (-)/cm(2).
We observe via freeze-fracture transmission electron microscopy the transition from the disc-like micellar nematic phase (N (L)) to the lamellar smectic phase of Decylammonium Chloride - Ammonium
We have investigated the temperature dependence of the streaking that we had previously discovered in electron-diffraction patterns of single crystals of syndiotactic polypropylene.
We present the results of an electron microscopy study of Pb- substitution in bulk Bi-Sr-Ca-Cu-O superconductors.
At the heart of "dynamic embrittlement" phenomena is the stress-induced segregation of microscopic quantities of embrittling impurities to fracture surfaces.
We report on the transport properties of a two-dimensional electron gas (2DEG) confined in an AlGaN/GaN heterostructure grown by plasma-assisted molecular beam epitaxy on a semi-insulating GaN temp
We report on the transport properties of a two-dimensional electron gas (2DEG) confined at the lower interface of a GaN/Al0.
The variation of electrical conductivity, field-effect mobility, Hall coefficient, and superconducting T(c) with disorder parameter k(F)1 (product of Fermi wavevector and elastic mean free path) is
Recently, a thin carbon film deposited on the surface of silica optical fibers has been shown to improve the fiber's resistance to static fatigue and hydrogen permeation.
