HE high-frequency admittances of electron streams flowing between parallel-plane electrodes have stimulated considerable theoretical interest.
Plasma assisted chemical vapor deposition of silicon films from silanes is widely used in the fabrication of silicon devices.
The microscopic surfaces of small silicon clusters offer a model for studying chemistry at highly reactive silicon centers.
Recently there has been strong interest in epitaxial growth of GaAs on Si and characterization of its material properties.
A second-order twin boundary in Si, of the "SIGMA 9" type, is investigated with first principles density functional theory and with an empirical tight binding model.
Linear-augmented-plane-wave calculations of the electronic and structural properties of CaSi sub 2 for three types of stacking of Ca layers and Si double-layers are presented.
An optical slot switching ring network called POADM (packet optical add-drop multiplexers) was formerly proposed as a flexible solution to carry time-varying traffic, for instance in metro networks
An optical slot switching node network called POADM (packet optical add-drop multiplexers) has formerly been proposed as a flexible solution for metropolitan ring networks to carry data traffic wit
The results of linear-augmented-plane-wave electronic-structure calculations on the body-centered-tetragonal phase of La2Cu)4 provide insight concerning the origin of high-temperature superconducti
The electronic structure of body-centered-tetragonal Ba sub 2 Tl sub 2 CuO sub 6, the simplest member of a new family of high-T sub c superconducting cuprates, has been calculated with the use of t
