We have prepared high quality tunnel junctions on thin films of Nb(3)Sn, Nb(3)Ge, Nb(3)Al and TiN with artificial tunnel barriers of Al-oxide and AlZr-oxide.
Current-voltage tunneling characteristics in the high critical temperature superconducting material Y sub 1 Ba sub 2 Cu sub 3 O sub (9-delta) have been measured using the break junction technique.
Numerous electron-beam resist systems are either commercially available or have been reported in the literature.
This improved magic-eye tuning indicator comprises a cylindrical tube viewed normal to the axis and illuminates a band width at the curved surface proportional to applied voltage.
We model, in an elementary way, the excited electronic states of semiconductor crystallites sufficiently small (~50 angstrom diameter) that the intrinsic bulk band gap does not form.
We report on a detailed study of the electron-exciton scattering in a GaAs quantum well (QW) with a variable density two-dimensional electron gas.
By measuring the temperature dependence of the optical absorption and luminescence of modulation-doped GaAsAlGaAs quantum wells, we show that the lowest energy absorption peak is dramatically diffe
Transport of minority carriers in semiconductor plasmas can be strongly affected by electron-hole scattering.
The energy dissipation mechanisms of a neutral gas atom or molecule interacting with a crystal surface lie at the core of adsorption/desorption dynamics.
We consider the creation of electron-hole pairs in a semiconductor by energy transfer from an excited molecule near the surface.
