Publications

The Mossbauer effect of the 37.2-keV gamma line of Sb has been employed to study the electronic configuration of Sb ions in BaPb sub (1-x) Sb sub x O sub 3 (0.1= x =0.4) superconducting compounds.

The local density functional approach for calculating heterojunction valence band offsets is used to examine two aspects of the Si/Ge strained layer system.

A combination of linear augmented-plane-wave and Tight-Binding (TB) techniques has been applied to calculate the electronic band structures of selected members of the Ba sub (n+1) Pb sub n O sub (3

A unique feature of the new oxide superconductors is the fact that E sub F falls within the O(2p) band manifold, thereby making O an electronically active constituent.

The electronic structure of Ba sub 2 YCu sub 3 O sub (6.9) has been calculated using the linear augmented-plane-wave method.

The results of electronic-structure calculations for ordered Ba sub (0.5) K sub (0.5) BiO sub 3 alloys confirm that the antibonding Bi(6s)-O(2p) conduction band near E sub F in the cubic BaBiO sub

The results of x-ray fluorescence measurements of thiophenes {[}regioregular poly (3-hexylthiophene (P3HT) and alpha,omega -dihexylquaterthiophene (DH alpha 4T)] and phtalocyanines {[}copper phtalo

The linear augmented-plane-wave method has been applied to calculate the electronic structure and properties of the orthorhombic metastable base-centered (C49) and equilibrium face-centered (C54) p

This chapter provides a theoretical and practical treatment of one of the three major electronics packaging problems: interconnection.

We have observed a series of very narrow peaks in the low temperature photocurrent-voltage characteristic of multiquantum well p- i-n junctions grown by molecular beam epitaxy.