Publications

The electronic structure of the high T sub c superconducting oxide compounds is discussed.

The electronic structure of the high T sub c superconducting compounds La sub 2 CuO sub 4 and YBa sub 2 Cu sub 3 O sub 7 is discussed. The 40K material La sub 2 CuO sub 4 is analyzed in detail.

An internally consistent set of parameters for the extended, three band Hubbard model of the Cu-O sheets has been calculated from first principles using a constrained density functional approach.

The valence band and C 1s photoemission spectra were measured from the tips and the sidewalls of multiwalled carbon nantoubes grown on Si substrates.

The electronic structure of multiwalled carbon nanotubes aligned perpendicularly on a Si substrate was studied by means of photoelectron spectromicroscopy.

The Mossbauer effect of the 22 keV gamma-line of sup (151) Eu has been employed to study the electronic configuration of Eu ions in the high T sub c superconducting material Ba sub 2 EuCu sub 3 O

We report the results of a study of Ge-Si strained-layer superlattices grown on Si substrates. These results allow us to study the transition between superlattice-like and bulk-like states.

This is the write-up of a talk to be given at the Fourth International Symposium on Small Particles and Inorganic Clusters Aix-en- Provence, July 5 - 9, 1988.

The electronic structure of Mott insulators continues to be a major unsolved problem in physics despite more than 50 years of research.

The calculated band properties of the cuprate and bismuthate high-T sub c superconductors provide valuable insight regarding the chemistry and doping mechanisms that are operative in these compound