An internally consistent set of parameters for the extended, three band Hubbard model of the Cu-O sheets has been calculated from first principles using a constrained density functional approach.
The valence band and C 1s photoemission spectra were measured from the tips and the sidewalls of multiwalled carbon nantoubes grown on Si substrates.
The electronic structure of multiwalled carbon nanotubes aligned perpendicularly on a Si substrate was studied by means of photoelectron spectromicroscopy.
The Mossbauer effect of the 22 keV gamma-line of sup (151) Eu has been employed to study the electronic configuration of Eu ions in the high T sub c superconducting material Ba sub 2 EuCu sub 3 O
We report the results of a study of Ge-Si strained-layer superlattices grown on Si substrates. These results allow us to study the transition between superlattice-like and bulk-like states.
This is the write-up of a talk to be given at the Fourth International Symposium on Small Particles and Inorganic Clusters Aix-en- Provence, July 5 - 9, 1988.
The electronic structure of Mott insulators continues to be a major unsolved problem in physics despite more than 50 years of research.
The calculated band properties of the cuprate and bismuthate high-T sub c superconductors provide valuable insight regarding the chemistry and doping mechanisms that are operative in these compound
The Mossbauer effect of the 37.2-keV gamma line of Sb has been employed to study the electronic configuration of Sb ions in BaPb sub (1-x) Sb sub x O sub 3 (0.1= x =0.4) superconducting compounds.
The local density functional approach for calculating heterojunction valence band offsets is used to examine two aspects of the Si/Ge strained layer system.
