Publications

Displaying 29491 - 29500 of 37748

Second-Harmonic Generation in Quantum Cascade Lasers with Electric Field and Current Dependent Nonlinear Susceptibility

We demonstrate a quantum cascade laser design with an integrated resonant nonlinearity for second-harmonic generation.

Second-order asynchronous interference cancellation: Regularized semi-blind technique and non-asymptotic maximum likelihood benchmark

An asynchronous interference cancellation problem is addressed where training and working intervals are available that contain the desired signal and arbitrary overlapping interference.

Second-order PMD measurement using polarization dependent baseband amplitude modulation method

A new time-domain method for measuring the second-order polarization mode dispersion is described and demonstrated.

Second-order PMD outage of first-order compensated fiber systems

Differential dispersion elements can model polarization mode dispersion (PMD) characteristics of fibers compensated to first order.

Second-Order PMD Outage of First-Order Compensated Fiber Systems

Differential dispersion elements can model polarization mode dispersion (PMD) characteristics of fibers compensated to first order.

Second-Order Semi-Blind Adaptive Interference Cancellation: Maximum Likelihood Solution

The synchronous interference cancellation problem is addressed when training and working intervals are available, containing the desired signal and completely overlapping interference.

Second-order semi-blind adaptive interference cancellation: Maximum likelihood solution

The synchronous interference cancellation problem is addressed when training and working intervals are available containing the desired signal and completely overlapping interference.

Secondary Electron Emission During Ion Implantation

Secondary electron emission can have a strong effect, usually detrimental, upon ion dose control and uniformity.

Secondary Ion Relative Sensitivity Factors of 49 Elements in Si for O sup + sub 2 Bombardment with Negative Ion Detection and Cs sup + Bombardment with Positive Ion Detection

Most SIMS analyses of semiconductor materials are made with P sup + sub 2 and positive ion detection (O sup + sub 2, +) and Cs sup + and negative ion detection (Cs sup +,-).

Secondary Ion Yield Changes in Si and GaAs Due to Topography Changes During Ion Bombardment

Changes in secondary ion yield of matrix and dopant species have been correlated with changes in surface topography during O2+ bombardment of Si and GaAs.