Publications

We report on the fabrication and characterization of single-crystal field-effect transistors (FETs) based on 2,6-diphenylbenzo{[}1,2-b:4,5-6']diselenophene (DPh-BDSe).

Heteroepitaxy of single-crystal Gd2O3 on GaN (with a wurtzite hexagonal close-packed (hcp) structure) and single-crystal GaN on Gd2O3 was achieved.

Single-crystal yttrium aluminum garnet (YAG) phosphors activated with rare-earth ions have been incorporated into cathode ray tubes.

We have incorporated an aluminum single-electron transistor (SET) directly on top of a vertical quantum dot, enabling the use; of the SET as an electrometer that is extremely responsive to the moti

Spatially localized electronic states in a two-dimensional electron gas in the quantum Hall regime are imaged using a scanning single-electron-transistor probe.

We report transport properties of two single-electron transistors (SETs) on a GaN/AlGaN heterostructure. The first SET formed accidentally in a quantum point contact near pinchoff.

Single-fiber cable assemblies have been designed for use in tactical fiber- optic communications systems and robotic vehicle applications.

We describe a simple way to achieve cw single frequency laser operation with a grating as the sole tuning element.

This paper presents a novel example-based single-image superresolution procedure that upscales to high-resolution (HR) a given low-resolution (LR) input image without relying on an external diction

In this paper, an equation is derived for the optimum signal-to-noise ratio (s/n) of a single-integration, adaptive delta modulator.