We report on the use of X-rays to excite DX centers in Si doped Al0.35Ga0.65As into their shallow donor state, as monitored by measuring the resulting persistent photoconductivity.
We describe a new method of analyzing the structure of interfaces between thin films and their substrates.
Magnetic x-ray diffraction combined with x-ray focusing optics is used to image individual antiferromagnetic spin density wave domains in a chromium single crystal at the micron scale.
CuInSe2 photoanodes can be optimized for use in electrochemical photovoltaic cells, containing aqueous polyiodide as the electrolyte, by wet chemical etching in Br2/MeOH and subsequent thermal tre
X-ray photoelectron spectroscopy can determine the elemental composition, chemical states, and Si non-stoichiometric defects as a function of depth for current gate oxides because the escape depths
The valence band discontinuity DeltaE(v) has been determined for the (100) GaSb/AlSb strained-layer heterojunction with a room temperature lattice mismatch of 0.65%, using x-ray photoemission cor
In this work, x-ray photoemission core level spectroscopy (XPS) has been used to determine the valence-band discontinuities DELTA E sub v for thin (100)-oriented heterojunctions grown by MBE in two
Core level spectra of Bi-Sr-Ca-Cu oxide thin films 200angstroms thick produced by RF magnetron sputtering on MgO substrates at room temperature have been measured.
Resonant enhancement of the scattering intensity of the magnetic satellite resulting from the basal plane spiral antiferromagnetic structure is observed in dysprosium metal at the L sub (III) absor
Resonant enhancement of the magnetic x-ray scattering cross- section in UAs has been investigated by tuning the incident x-ray energy through the Uranium M sub (III), and M sub (IV), and M sub (V)
