Publications

Double crystal rocking curves of samples grown on (001) oriented GaSb substrates by molecular beam epitaxy have been analyzed by fitting computer simulations to data for the symmetric (004) and (0

Double-crystal rocking curves of MBE-grown samples with bilayer periods in excess of 70angstroms have been analyzed by fitting simulated rocking curves to data.

X-ray and Raman scattering measurements have been performed on pseudomorphically strained Si-Ge sub x Si sub (1-x) Fibonacci lattices with low stage numbers.

We have examined the GaSb(111)2x2 surface prepared by sputtering and annealing using grazing-incidence x-ray diffraction.

Satellite peaks analogous to superlattice peaks, have been observed for both corrugated InP substrates and for such substrates overgrown with epitaxial InGaAsP.

The crystallographic texture of electroplated Cu in damascene trenches has been examined by x-ray diffraction pole figure analysis.

The clean W(001) surface undergoes a reconstruction upon cooling below 300 K which produces a (square root 2 x square root 2) R45 degree two-dimensional periodicity [1].

Band theory predicts a (epsilon - DELTA) sup (-1/2) van Hove singularlity in the tunneling density of states at the minimum energy (DELTA) of an unoccupied subband in a one-dimensional quantum wire

We report on the use of X-rays to excite DX centers in Si doped Al0.35Ga0.65As into their shallow donor state, as monitored by measuring the resulting persistent photoconductivity.

We describe a new method of analyzing the structure of interfaces between thin films and their substrates.