Conductivity (ac and dc) in III-V amorphous semiconductors and chalcogenide glasses.

Variable range hopping as evidenced by a resistivity proportional to exp T (-1/4) has been induced in many III-V amorphous semiconductors (InSb, A1Sb and GaAs) and even in chalcogenide glasses (As2Te3, As2Te(3-x)Se(x) by depositing films at 77K. It is therefore remarkable that the same procedure failed to generate variable range hopping in GaSb which is one of the less ionic III-V semiconductors.