InGaAs high speed communication photodiodes
04 October 2009
This paper reviews trends in InGaAs based communication photodetectors design. In particular, new avalanche structures using Al(Ga)(In)As large bandgap material used for high sensitivity photoreceivers in access network will be described as well as highly linear uni-travelling-carrier UTC photodiodes, well suited for high bit rates using coherent detection or for analog photonic links.