InGaAs PIN photodiodes grown on GaAs substrates by metal organic vapor phase epitaxy.
01 January 1987
We have fabricated and characterized high-efficiency, long- wavelength PIN photodiodes on In0.53Ga0.47As/InP/GaAs wafers grown by metal organic vapor phase epitaxy. Initial measurements indicate that good quality devices can be made in this highly stressed material system (lattice mismatch ~3.8%). These results suggest the possibility of fabricating optoelectronic integrated circuits (OEICs) by combining InGaAs(P) electrooptic devices with high-speed GaAs electronics.