InGaAs/InP p-i-n Photodiodes Grown by Chemical Beam Epitaxy.

Two types of mesa-type InGaAs/InP p-i-n photodiodes have been fabricated from wafers grown by chemical beam epitaxy (CBE): (1) a conventional diffused InGaAs homojunction and (2) a novel InP/InGaAs/InP double heterojunction. Both types of devices have exhibited very low dark current, good quantum efficiency of 70% (without anti-reflection coatings) and transit-time- limited pulse response. The lowest dark currents, less than 1 nA at -10V bias, have been achieved with the double heterojunction devices in spite of the fact that the p-n junction is coincident with a heterojunction interface. This attests to the excellent quality of heterojunction interfaces grown by CBE. These results also unequivocally established that CBE is capable of producing high quality multi-layer heterostructures for state-of- the art device applications.