InGaAs/InP Pseudo-Heterojunction Bipolar Transistors Grown by MOVPE.
01 January 1989
An InGaAs/InP pseudo-heterojunction bipolar transistor (PHBT) with a thin emitter barrier is demonstrated. A PHBT with a 5 nm-thick barrier showed a DC current gain of about 10, while the gain was as high as 220 for a device with a 20 nm-thick barrier. This value is close to that obtained in a conventional InP/InGaAs HBT with similar doping densities and fabrication process.