InGaAsP laser with semi-insulating current confining layers.
01 January 1986
The fabrication and performance characteristics of a InGaAsP laser structure with a semi-insulating current confining layer are reported. The semi-insulating layers are Fe doped InP and are grown using the metal-organic chemical vapor deposition growth technique. The lasers have threshold currents in the range 20-30 mA and external differential quantum efficiency ~0.2 mW/mA/facet at 30C. The bandwidth for small signal response is ~2 GHz which suggests that the laser structure is suitable for lightwave transmission systems operating at 1.7 Gb/s. Initial aging results yield an estimated operating lifetime of 10 years at 20C.