InGaAsP/InP double-heterostructure lasers grown by atmospheric- pressure MOVCD.
01 January 1985
Room-temperature operation of InGaAsP-InP double-heterostructure lasers grown by atmospheric pressure metalorganic chemical vapor deposition is reported. Optically pumped laser operation at 1.36 micron and 1.45 micron has been achieved and broad- area injection lasers operating at 1.37 micron with threshold current densities as low as 3.6 KA/cm(2) have been demonstrated.