InGaAsP/InP High-Power Semi-Insulating Blocked Planar Buried-Heterostructure Lasers Grown Entirely by Atmospheric Organometallic Vapor Phase Epitaxy
01 January 1987
High-power semi-insulating blocked planar buried-heterostructure (SIPBH) lasers were grown entirely by atmospheric organometallic vapor phase epitaxy (OMVPE) by using a novel dilution scheme for the trimethylgallium and AsH sub 3. Current thresholds as low as 20 mA and differential quantum efficiencies >20% per facet at 1. 3 and 1.5microns were obtained with power outputs of about 25 mW/facet. These results are similar to SIPBH lasers where liquid phase epitaxy was used to grow the active layer, but because of the better planarity and uniformity of OMVPE-grown material, it appears possible to grow material that can give a high yield of distributed feedback lasers.