InP-based bipolar phototransistors for microwave photonic applications

Fast optical detectors or optically controlled microwave devices are key elements of microwave photonic systems. With the development and maturity of InP technology, the monolithic integration of high-speed devices, detectors and transistors, into optical receivers has flourished. In an effort to produce a photodetector with intrinsic gain and ability to be integrated directly into an optoelectronic monolithic integrated circuit (OEMIC) with heterojunction bipolar transistors (HBTs), heterojunction bipolar phototransistors (photo-HBTs) have been widely investigated, in this paper, we will survey the state of the art performance of InP photo-HBTs and circuits based on this device.