InP D-HBT IC's for 40 Gb/s and Higher Bitrate Lightwave Tranceivers

Due to the ever increasing demand for bandwidth and to lower the cost per transmitted bit, next generation lightwave systems will operate at data rates of 40 Gb/s or beyond. Different semiconductor technologies can be used to realize the high-speed front-end functions at 40 Gb/s. SiGe bipolar has high integration density and is a good candidate for the complex digital functions as shown by the monolithic integration of 40 Gb/s CDR with VCO and 1:4 DEMUX.