InP-metal Schottky barrier p-n junctions with improved I-V characteristics.
01 January 1986
A new metal-semiconductor barrier contact intermediate between a true Schottky barrier and a p-n junction, is demonstrated in InP. We have measured a significant reduction in reverse leakage current achieving J(R) =1 x10(-3) A/cm(2) at 300K at -2 V and an improved forward turn-on voltage, enhanced from 0.25 5o 1.0 V at 300K.