InP/GaAsSb/InP multifinger DHBTs for power applications
25 May 2008
We report the performances of multifinger GaAsSb/InP double heterojunction bipolar transistors (DHBTs) designed for high power applications. 2-finger 15times1 mum2 devices demonstrate maximum fT of 221 GHz and maximum fmax of 293 GHz when biased at JC = 370 kA/cm2 and VCE = 1.4V. Moreover we investigate the limitation of frequency performances with the number of fingers.