InP/In sub 0.53 Ga sub 0.47 As avalanche photodiodes grown by chemical beam epitaxy.

InP/In sub 0.53 Ga 0.47 As avalanche photodiodes with separate absorption and multiplication regions (SAM-APDs) have been fabricated from wafers grown by chemical beam epitaxy (CBE), a growth technique which combines many of the advantages of molecular beam epitaxy and metal-organic chemical vapor deposition. These APDs exhibit low dark current and good quantum efficiency. The pulse response exhibits the two component response typical of the SAM-APD structure. The slow component is 12 ns and the fast component is less than 200 ps.