InP/InGaAsP/InGaAs Avalanche Photodiodes with 70 GHz Gain-Bandwidth Product.
01 January 1987
Wide bandwidth (8 GHz) and a high gain-bandwith (70 GHz) have been achieved with InP/InGaAsP/InGaAs avalanche photodiodes (APDs) grown by chemical beam epitaxy (CBE). These APDs also exhibit low dark current ( 150 nA at 90% breakdown), good external quantum efficiency (> 90% at lambda = 1.3micron), and high avalanche gain (M sub o ~= 40).