InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions grown by metalorganic chemical vapor deposition.
01 January 1986
InGaAs/InGaAsP/InP avalanche photodiodes with separate absorption, "grading", and multiplication regions (SAGM-APDs) have been fabricated for the first time from wafers grown by metalorganic chemical vapor deposition (MOCVD). These APDs exhibit low dark current (~~32 nA 90% breakdown) and high-speed pulse response (~~ 100ps FWHM).