Integrated Waveguide P-I-N Photodetector by MOVEP Regrowth.

An InGaAs p-i-n photodetector for detection in the 1.0micron- 1.6micron wavelength range has been integrated at the end of a ridge waveguide in InP using a metal organic vapor phase epitaxial (MOVPE) regrowth technique. The waveguides had an average propagation loss of 3 dB/cm and 95% of the guide light was coupled into the photodetector. The photodetector had a 3 dB bandwidth of 1.5 GHz with a pulse response (full width at half maximum) of 80ps at 1.3micron wavelength. This is the first demonstration of an efficient, compact and high speed monolithic integrated waveguide-photodetector in the InGaAs/InP material system using epitaxial regrowth.