Interdiffusion Across Individual HgCdTe/CdTe Interfaces, Studied at Near Atomic Resolution
03 October 1989
We combine chemical lattice imaging and vector pattern recognition [1,2] to determine, as a function of annealing temperature, the composition of individual atomic planes across each HgCdTe/CdTe interface of a multi-quantum well stack. The resultant composition profiles, which directly reveal the chemical change across each interface at near atomic resolution, are analysed in terms of linear and non-linear diffusion theory, to deduce the interdiffusion coefficient and its activation energy.