Interstitial defect reactions in silicon.

Deep level transient spectroscopy has been employed in a study of impurity - interstitial defect reactions in silicon following room temperature electron irradiation. Three defects with energy levels at E sub c - 0.17 eV, E sub v + 0.36 eV and E sub c - 0.30 eV have been isolated and identified from their reactions and electrical properties as C sub 8 - C sub (i9) C sub i - O sub i and P - C sub i respectively. The E sub c - 0.17 eV [ME(1.17)] and E sub c - 0.30 eV [ME(0.3)] defects exhibit metastable properties. Our results reveal the multistructural nature and chemical reactivity of the silicon self-interstitial.