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    Intrinsic Strain At Lattice Matched Ga Sub 0.47 In Sub 0.53 As/InP Interfaces As Studied With High Resolution X-Ray Diffraction

Intrinsic Strain at Lattice Matched Ga sub 0.47 In sub 0.53 As/InP Interfaces as Studied with High Resolution X-Ray Diffraction

20 March 1989

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High resolution X-ray diffraction (HRXRD) studies of Ga sub 0.47 In sub 0.53 As/InP superlattices reveal, for the first time, the presence of an intrinsic interfacial strain at heteroepitaxial interfaces. This strain is produced by an asymmetric ordering of the atomic layers in the leading and trailing interfaces of each quantum well as the result of the normal growth sequence during gas source molecular beam epitaxy (GSMBE).