Investigation of De-embedding Techniques Applied on Uni-Traveling Carrier Photodiodes

The generation and transmission of millimetre wave signals for 5G applications require the use of broadband and high output power photodetectors capable of bridging the optical and electronic domain. This work reviews and analyses de-embedding techniques contributing to the characterisation of the physical properties within the active region of uni-traveling carrier photodiodes. De-embedding methods analytically remove the parasitic effects of the electrical transmission lines connected to the active area of these devices allowing the extraction of their series resistance and junction capacitance towards the synthesis of an equivalent circuit with lumped elements. The Open-Short technique is examined and a systematic error introduced by this process is quantified leading to the implementation of a Corrected equation. The characteristic features of an S-Parameter based de-embedding are also analysed through simulation approaches.