Investigation of Stressing InP/InGaAs DHBTs Under High Current Density

We report on an InP/InGaAs DHBT technology, allowing high-speed operation with F sub t = 150 GHz, F sub max = 200 GHz at current densities of I sub c = 110 kA/cm sup 2, while maintaining BV sub ceo > 12 V. Moreover, excellent device uniformity and reliability is demonstrated under high current density stress with Time-to-Failure (TTF) > 45 years at T sub junc = 110 deg C making this technology suitable for high-speed IC fabrication.