Investigation of the Influence of Zn-diffusion profile on the electrical properties of InGaAs/InP photodiodes

Dark current is a drastic specification for any kind of sensor and particularly for imagers dedicated to low light level. We propose here a method for optimizing the InGaAs photodiode properties. An anomalous doping profile feature revealed by scanning capacitance microscopy is counterbalanced by modifying Zn-diffusion process. We analyze the electrical results before further investigation.