Ion-Beam-Induced Metal-Insulator Transition in YBa sub 2 Cu sub 3 O sub 7-delta: A Mobility Edge?
16 February 1989
We have studied the temperature-dependent resistivity and Hall coefficient of epitaxial YBa sub 2 Cu sub 3 O sub 7-delta films as a function of ion-beam-induced damage. At low ion fluences, the films behave like typical metals above the superconducting transition. At higher ion fluences, superconductivity is destroyed in the material and it eventually goes Hall coefficient changes very little. This implies that the transition is a result of a reduction in mobility rather than a drop in carrier density.