Ion Beam Synthesis of Thin Buried Layers of SiO sub 2 In Silicon

Silicon on insulator structures have been successfully formed by the implantation of high doses (>10 18 cm-2) of O+ or N+ ions to synthesise buried layers of oxide or nitride. After annealing, these layers are typically 3000 A - 6000 A thick and the resulting SOI structures are suitable as substrates for small geometry integrated circuits.