Ion emission due to the scattering of hyperthermal Xe atoms from single crystal surfaces.

01 January 1988

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We report the emission of ions from single crystal surfaces due to the scattering of hyperthermal Xe over the energy range 6 E sub i (eV) 20. We observe Ga sup + form GaAs(110), In sup + form InP(100), and alkali and other impurity ions from all surfaces. At E sub i = 16 eV the ion emission probability for In sup + reaches 1 x 10 sup (-3). The yields increase as the Xe incident angle goes towards grazing, have a similar Xe kinetic energy dependence, and a common threshold near 6. 5 eV at the incident angles of maximum efficiency. We discuss possible mechanisms for ion emission.