Ion Implantation.

This memorandum will be published in the second edition of the book VLSI Technology, edited by S. M. Sze. It describes the topic of ion implantation, from fundamentals to recent developments: Range theory (ion stopping, range distributions, damage, channeling, recoils), Equipment (basic layout, high current and energy machines, uniformity, contamination, focused ion beams), Annealing (furnace, RTA), Shallow junctions (low energies, tilted beams, silicides), High energy implantation (buried conductors, buried insulators), and Summary.