Ion-implantation and activation behavior of Si in MBE grown GaAs on Si substrates for GaAs mesfets.
01 January 1987
The suitability of MBE-grown GaAs layers on Si substrates has been studied for ion-implanted GaAs MESFET technology. The undoped As-grown GaAs layers had a carrier concentration below 10 sup (14) cm sup (-3), which is suitable for fabrication of directly ion-implanted MESFETS. Uniform Si ion implants into 4micron thick GaAs layers on Si were annealed at 900C for 10s using a rapid thermal annealing (RTA) system. Both the activation and the doping profile were similar to those obtained in bulk semi-insulating GaAs under similar conditions. The SIMS profiles of Si and As atoms near the GaAS:Si hetero- interface were identical before and after the RTA process, indicating negligible interdiffusion during the implant activation.