ION implantation in GaAs.
01 January 1987
Recent advances in the understanding of the relationship between implanted dopant solubility and electrical activity in GaAs are reviewed and direct lattice configuration measurements explaining these results are presented. The nature of residual defects remaining after activation annealing of GaAs, in particular rapid thermal annealing, are discussed, along with a review of the application of ion beams in promoting compositional disordering of GaAs-A/As superlattices. The outstanding problems remaining in the use of ion implantation technology for GaAs are also detailed.