Ion implantation of Si and Se donors in In0.53Ga0.47(As).

Ion implantation of Si and Se donors in In0.53Ga0.47(As) is reported. Both room temperature and elevated temperature (200 C) implants are performed. Repaid thermal annealing as well as conventional furnace anneals have been used. Both species yield relatively shallow profiles with peak electron concentrations ~1x10(19)cm(-3) and with sheet resistance less than 20omega/sq. Our results indicated that elevated temperature implants are effective in reducing implant damage and are important for heavy ions like Se(+) to achieve activation and mobility.