Isoelectronic Doping in GaAs Epilayers Grown by Molecular Beam Epitaxy.
01 January 1988
In doped GaAs epilayers have been grown by molecular beam epitaxy. This work investigates the relatively unexplored In doping concentration in the range of 10 sup (17) - 10 sup (19) cm sup (-3). Enhancement in Hall mobility and photoluminescence intensity have been observed. Proper isoelectronic doping may lead to reduction of the unintentional impurity level.