Low-power 100 GHz shunt-peaked regenerative frequency divider using 0.18 mu m SiGe BiCMOS

A report is presented on the performance of a low-power 100 GHz high-speed shuntpeaked regenerative frequency divider (RFD) fabricated in a low-cost 200/180 GHz f(T)/f(max) 0.18 mu m SiGe BiCMOS technology. A bandwidth enhancement technique based on inductive peaking is employed to improve further the high frequency performance of the RFD with low power consumption. Design measures including the loop dynamics and selection of the shunt-peaked inductor are discussed. The RFD operates with a wide operation bandwidth from 20 GHz to at least 100 GHz with excellent input sensitivity while consuming a total DC power of only 198 mW from a nominal 3.3 V supply. The compact chip area including the pads is 0.6 x 0.4 mm(2).