MESOTAXY: SYNTHESIS OF BURIED SINGLE-CRYSTAL SILICIDE LAYERS BY IMPLANTATION.

High dose implantation of metal ions in silicon followed by annealing can be used to form buried single-crystal disilicide layers with atomically abrupt interfaces. This technique, which we call mesotaxy, works particularly well for cubic silicides with a small lattice mismatch with Si, such as CoSi sub 2 and NiSi sub 2 . However, oriented layers of hexagonal disilicides, such as CrSi sub 2 and YSi sub 2 , that are difficult to grow by conventional techniques have also been fabricated in (111) Si. Recent results on oriented growth of a silicide with a completely different lattice structure, CaSi sub 2 , will also be presented.