Mg-doping in LPE grown AIGaAs and the temperature dependence of threshold current in injection lasers.
01 January 1986
The carrier concentration of LPE grown Mg-doped AlGaAs is determined as a function of atom fraction Mg in the growth solution. Double heterostructure lasers which use Mg as the P-dopant are shown to exhibit less temperature dependence of threshold current than those with Ge due to the higher carrier concentration achieved with Mg.