Micro-X-ray Fluorescence in InGaAs and InGaAsP Layers Obtained by Selective Area Growth

Semiconductor layers of InGaAsP and InGaAs grown in narrow gaps between SiO sub 2 stripes, which are separated by several microns, are important building blocks in modern optoelectronics. Information on the semiconductor layer composition (ratio of In-Ga and As-P) is needed for understanding of the growth kinetics in the regime of the selective area growth (SAG). This knowledge has both the fundamental importance and is useful to characterize the behavior of industrial MOVPE reactors. We investigated properties of the SAG layers of InGaAsP and InGaAs with the thickness of 0.4 micron grown by MOVPE on InP substrates utilizing microbeam x-ray fluorescence at CHESS. Layer composition of ternary and quaternary layers has been measured with the spatial resolution of 0.5 micron. X-ray fluorescence data have been compared to the results of micro-photoluminescence.