Microelectronics dimensional metrology in the scanning electron microscope.

01 January 1986

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The increasing integration of microelectronics into the submicron region for VHSIC and VLSI applications necessitates the examination of these structures both for linewidth measurement and defect inspection by systems other than the optical microscope. The low voltage scanning electron microscope has been recently employed in this work due to its potentially high spatial resolution and large depth of field. This paper discusses applications of the scanning electron microscope to microelectronics inspection and metrology in light of the present instrument specifications and capabilities, and relates it to the processing controls required for submicron processing.