Microplasma characteristics in LPE grown InP-In0.53Ga0.47As long wavelength avalanche photodiodes with separated multiplication and absorption regions.
01 January 1985
Characterization of microplasmas have been performed on InP- In0.53Ga0.47As avalanche photodiodes (APDs) using electron beam induced current (EBIC) and low temperature cathodoluminescence (CL) measurements. Microplasmas are shown to be associated with a local increase of the electric field resulting from doping fluctuations which are tentatively associated with impurity segregation at crystal imperfections.