Microstructural characterization of high dose oxygen implanted silicon.
01 January 1986
The microstructure of oxygen implanted silicon for use in silicon-on-insulator technology has been examined by transmission electron microscopy. A variety of buried oxide layers prepared using oxygen doses below and above that required for stoichiometric SiO sub 2 formation have been studied. High resolution imaging in cross-section has revealed exceptionally flat Si-SiO sub 2 interfaces, comparable to the best thermally grown Si-SiO sub 2 interfaces. Examination of as-implanted material shows a complex interwoven crystalline/amorphous structure which evolves during high temperature (1350-1400C) annealing into a buried oxide layer.